bsp170p sipmos ? small-signal-transistor features ? p-channel ? enhancement mode ? avalanche rated ? d v /d t rated ? pb-free lead plating ; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c a t a =70 c pulsed drain current i d,pulse t a =25 c avalanche energy, single pulse e as i d =1.9 a, r gs =25 ? mj avalanche energy, periodic limited by t jmax e ar reverse diode d v /d t d v /d t i d =1.9 a, v ds =48 v, d i /d t =-200 a/s, t j,max =150 c kv/s gate source voltage v gs v power dissipation p tot t a =25 c w operating and storage temperature t j , t stg c esd class jesd22-c101 (hbm) soldering temperature iec climatic category; din iec 68-1 -1.9 -1.5 1.8 value 70 -7.6 steady state 0.18 55/150/56 -55 ... 150 20 -6 1a (250v to 500v) 260 c v ds -60 v r ds(on),max 0.3 ? i d -1.9 a product summary pg-sot223 type package tape and reel information marking lead free packing bsp170p pg-sot223 h 6327: 1000pcs/reel bsp170 p yes non dry rev 2.5 3 page 1 20 12 - 11 - 26 ? qualified according to aec q101 ? halogen-free?according?to?iec61249-2-21
bsp170p parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction -soldering point r thjs - - 20 k/w smd version, device on pcb: r thja minimal footprint - - 110 k/w 6 cm 2 cooling area 1) --70 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-250 a -2.1 -3 -4 zero gate voltage drain current i dss v ds =-60 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-60 v, v gs =0 v, t j =125 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-10 v, i d =-1.9 a - 239 300 m ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-1.9 a 1.3 2.6 - s 1) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air . values rev 2.5 3 page 2 20 12 - 11 - 26
bsp170p parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 328 410 pf output capacitance c oss - 105 135 reverse transfer capacitance c rss -3848 turn-on delay time t d(on) -1421ns rise time t r -2842 turn-off delay time t d(off) - 92 138 fall time t f -6090 gate charge characteristics gate to source charge q gs - -1.4 -1.9 nc gate to drain charge q gd - -4.9 -7.4 gate charge total q g - -10 -14 gate plateau voltage v plateau - -4.34 - v reverse diode diode continuous forward current i s - - -1.98 a diode pulse current i s,pulse - - -7.6 diode forward voltage v sd v gs =0 v, i f =-1.9 a, t j =25 c - -0.83 -1.1 v reverse recovery time t rr -3654ns reverse recovery charge q rr -4162nc t a =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-30 v, v gs =- 10 v, i d =-1.9 a, r g =6 ? v dd =-48 v, i d =-1.9 a, v gs =0 to -10 v v r =30 v, i f =| i s |, d i f /d t =100 a/s rev 2.5 3 page 3 20 12 - 11 - 26
bsp170p 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); | v gs | 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c 1) ; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms 100 ms dc 10 1 10 0 10 -1 10 -2 0.1 1 10 100 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 2 10 1 10 0 10 -1 t p [s] z thjs [k/w] 0 0.3 0.6 0.9 1.2 1.5 1.8 0 40 80 120 160 t a [c] p tot [w] 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 40 80 120 160 t a [c] -i d [a] rev 2.5 3 page 4 20 12 - 11 - 26
bsp170p 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -4 v -4.5 v -5 v -5.5 v -6 v -7 v -10 v -20 v 0 100 200 300 400 500 600 700 800 900 1000 0123 -i d [a] r ds(on) [m ? ] 25 c 125 c 0 1 2 3 012345 -v gs [v] -i d [a] 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 -i d [a] g fs [s] -4v -4.5 v -5 v -5.5 v -6v -7 v -10 v -20 v 0 1 2 3 4 5 6 7 012345 -v ds [v] -i d [a] rev 2.5 3 page 5 20 12 - 11 - 26
bsp170p 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-1.9 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0 50 100 150 200 250 300 350 400 450 500 550 600 -60 -20 20 60 100 140 t j [c] r ds(on) [m ? ] ciss coss crss 10 3 10 2 10 1 0 5 10 15 20 25 -v ds [v] c [pf] typ. min. max. 0 1 2 3 4 5 -60 -20 20 60 100 140 t j [c] -v gs(th) [v] 25 c, typ 150 c, typ 25 c, 98% 150 c, 98% 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 2 2.5 3 -v sd [v] i f [a] rev 2.5 3 page 6 20 12 - 11 - 26
bsp170p 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-1.9 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage v br(dss) =f( t j ); i d =-250 a 50 55 60 65 70 -60 -20 20 60 100 140 t j [c] -v br(dss) [v] 25 c 100 c 125 c 10 4 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] -i av [a] 12 v 30 v 48 v 0 2 4 6 8 10 12 14 16 0 5 10 15 q gate [nc] v gs [v] rev 2.5 3 page 7 20 12 - 11 - 26
bsp170p package outline sot-223: outline footprint packaging tape operating and storage temperature dimensions in mm rev 2.5 3 page 8 20 12 - 11 - 26
rev 2.5 3 page 9 20 12 - 11 - 26
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